The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Aug. 04, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chiung-Ting Ou, Tainan, TW;

Ming-Yih Wang, Hsinchu, TW;

Jian-Hong Lin, Yunlin County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 23/481 (2013.01);
Abstract

A memory device includes a transistor, an anti-fuse element, a first gate via, a second gate via, and a bit line. The transistor includes a fin structure and a first gate structure across the fin structure. The anti-fuse element includes the fin structure and a second gate structure across the fin structure. The first gate via is connected to the first gate structure of the transistor and is spaced apart from the fin structure in a top view. The second gate via is connected to the second gate structure of the anti-fuse element and is directly above the fin structure. The bit line is connected to the fin structure and the transistor.


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