The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Sep. 24, 2010
Chiung-ting Ou, Hsin-Chu, TW;
Chih-chiang Chang, Zhudong Township, TW;
Chiung-Ting Ou, Hsin-Chu, TW;
Chih-Chiang Chang, Zhudong Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A device includes a first semiconductor fin, and a second semiconductor fin parallel to the first semiconductor fin. A straight gate electrode is formed over the first and the second semiconductor fins, and forms a first fin field-effect transistor (FinFET) and a second FinFET with the first and the second semiconductor fins, respectively, wherein the first and the second FinFETs are of a same conductivity type. A first electrical connection is formed on a side of the straight gate electrode and coupling a first source/drain of the first FinFET to a first source/drain of the second FinFET, wherein a second source/drain of the first FinFET is not connected to a second source/drain of the second FinFET.