Changhua, Taiwan

Ching-Song Yang

This inventor holds 7 USPTO granted patents. Top assignees: Ememory Technology Inc., Other. Active years: 2000-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ching-Song Yang. Retrieved from https://idiyas.com/inventor/ching-song-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 42.9

Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 52(Granted Patents)


Location History:

  • Hsi-Hu Chen, Chang-Hua Hsien, TW (2000)
  • Chang-Hua Hsien, TW (2001 - 2004)

Company Filing History:


Years Active: 2000-2004

Loading Chart...
7 patents (USPTO):Explore Patents

Title: Innovations of Ching-Song Yang

Introduction

Ching-Song Yang is a prominent inventor based in Chang-Hua Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work focuses on non-volatile memory structures, which are crucial for modern electronic devices.

Latest Patents

One of his latest patents is a non-volatile semiconductor memory structure. This invention includes a method of manufacturing a non-volatile semiconductor memory cell structure. The method involves forming a shallow first-type well layer, a second-type well layer, and a deep first-type well layer over a substrate. Stack gates are formed over the shallow first-type well layer, followed by the formation of source and drain terminals. The source terminals penetrate through the shallow first-type well layer and connect with the second-type well layer, while the drain terminals are positioned close to the surface of the shallow first-type well layer. Both types of terminals contain second-type dopants.

Another notable patent is for a non-volatile semiconductor memory device that features divided bit lines. In this design, a main bit line is controlled by at least one bit line selection device, allowing it to transfer its potential to a selected sub bit line. This innovation ensures that memory cells in a selected sector operate effectively while preventing overloads caused by parasitic capacitance. The arrangement of memory cells and the bit line selection device in parallel within a P-well and an N-well, respectively, helps to avoid disturbances during programming or erasing the bit line.

Career Highlights

Ching-Song Yang has worked with Ememory Technology Inc., where he has further developed his expertise in semiconductor technologies. His contributions have been instrumental in advancing the capabilities of non-volatile memory devices.

Collaborations

Throughout his career, Ching-Song Yang has collaborated with notable colleagues, including Ching-Hsiang Hsu and Meng-Yi Wu. Their combined efforts have led to significant advancements in the field of semiconductor memory technology.

Conclusion

Ching-Song Yang's innovative work in non-volatile semiconductor memory structures has made a lasting impact on the technology industry. His patents reflect a deep understanding of semiconductor design and manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…