The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Oct. 31, 2002
Meng-Yi Wu, Kao-Hsiung Hsien, TW;
Kung-Hong Lee, Ping-Tung Hsien, TW;
Fu-Yuan Chen, Kao-Hsiung Hsien, TW;
Hsin-Fen Chou, Chang-Hua Hsien, TW;
Ching-Song Yang, Chang-Hua Hsien, TW;
Ya-Chin Kin, Tao-Yuan Hsien, TW;
Ching-Hsiang Hsu, Hsin-Chu, TW;
eMemory Technology Inc., Hsin-Chu, TW;
Abstract
A method of forming and operating a trench split-gate non-volatile flash memory cell structure. The auxiliary gate of the structure is formed inside a trench on one side of the gate and the source terminal is underneath the auxiliary gate, thereby reducing overall area occupation of the auxiliary gate and the source terminal relative to the cell and increasing packing density. By enclosing the common source terminal inside a deep N-well layer, source resistance for reading data from the cell is reduced and the process of etching out a contact opening is simplified. The structure also ensures the injection of most hot electrons into the floating gate, thereby increasing execution speed.