Company Filing History:
Years Active: 2003
Title: Hsin-Fen Chou: Innovator in Flash Memory Technology
Introduction
Hsin-Fen Chou is a notable inventor based in Chang-Hua Hsien, Taiwan. He has made significant contributions to the field of non-volatile flash memory technology. With a total of 2 patents, his work has advanced the efficiency and performance of memory cell structures.
Latest Patents
Hsin-Fen Chou's latest patents include a method of forming and operating a trench split-gate non-volatile flash memory cell structure. This innovative method involves the formation of an auxiliary gate inside a trench on one side of the gate, with the source terminal positioned underneath the auxiliary gate. This design reduces the overall area occupied by the auxiliary gate and the source terminal relative to the cell, thereby increasing packing density. Additionally, by enclosing the common source terminal within a deep N-well layer, the source resistance for reading data from the cell is minimized, simplifying the process of etching out a contact opening. The structure also enhances the injection of hot electrons into the floating gate, which significantly boosts execution speed.
Career Highlights
Hsin-Fen Chou is currently employed at Ememory Technology Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in developing advanced memory solutions that meet the growing demands of modern technology.
Collaborations
Hsin-Fen Chou has collaborated with notable coworkers, including Meng-Yi Wu and Kung-Hong Lee. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
Hsin-Fen Chou's contributions to the field of flash memory technology exemplify his dedication to innovation. His patents reflect a commitment to enhancing memory cell structures, which play a crucial role in the advancement of electronic devices.