Yonghe, Taiwan

Ching-Kwun Huang

This inventor holds 3 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2003-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ching-Kwun Huang. Retrieved from https://idiyas.com/inventor/ching-kwun-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 66.7

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 26(Granted Patents)


Location History:

  • Yongho, TW (2003 - 2005)
  • Hsinchu, TW (2008)

Company Filing History:


Years Active: 2003-2008

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3 patents (USPTO):Explore Patents

Title: Innovations of Ching-Kwun Huang

Introduction

Ching-Kwun Huang is a notable inventor based in Yongho, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the design and application of RF devices and memory technologies. With a total of 3 patents, Huang's work has advanced the capabilities of integrated circuits and memory devices.

Latest Patents

Huang's latest patents include a "Capacitor and inductor scheme with e-fuse application." This innovation involves RF devices formed in integrated circuit devices, which include a top metal level overlying a substrate. The top metal level comprises pads and portions of planned RF devices, while an RF metal level overlying the top metal level completes the RF devices. This interconnected RF network may include capacitors, inductors, or both, and features fuses that allow for selective alterations using a laser directed through openings in a passivation layer.

Another significant patent is the "Method to modify 0.25 μm 1T-RAM by extra resist protect oxide (RPO) blocking." This method outlines the fabrication of a 1T-RAM device, detailing the steps involved in forming a semiconductor substrate with an access transistor area and an exposed bottom plate. The process includes the formation of a gate with an underlying gate dielectric layer, as well as a top plate with an underlying capacitor layer. The innovation also involves the use of a patterned resist protect oxide layer to protect certain areas during the silicidation process.

Career Highlights

Ching-Kwun Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in the semiconductor industry. His work has been instrumental in enhancing the performance and efficiency of various electronic devices.

Collaborations

Huang has collaborated with notable colleagues, including Chih-Chang Chen and Hsien-Chih Peng, who have contributed to his research and development efforts in the field.

Conclusion

Ching-Kwun Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovations continue to shape the future of electronic devices and integrated circuits.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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