Ching-Hsu Chan

Title: Ching-Hsu Chan: Innovator in Semiconductor Fabrication

Introduction

Ching-Hsu Chan is a notable inventor based in Taipei, Taiwan. She has made significant contributions to the field of semiconductor fabrication, particularly through her innovative patent.

Latest Patents

Ching-Hsu Chan holds a patent for a method titled "Self Aligned Silicide Contact Method of Fabrication." This patent describes a process for fabricating a self-aligned contact (SAC) and gate structure. The method involves forming a gate oxide layer, a conductive gate, a cap layer, and a source/drain on a substrate. A conformal buffer layer is then created, followed by the formation of an undoped polysilicon spacer and a dielectric layer over the substrate. Photolithography and etching technologies are employed to create a self-aligned opening in the dielectric layer and conformal buffer layer. Finally, the self-aligned contact opening is filled with a conductive layer to complete the self-aligned contact.

Career Highlights

Ching-Hsu Chan is currently associated with United Microelectronics Corporation, a leading company in the semiconductor industry. Her work has been instrumental in advancing fabrication techniques that enhance the performance and efficiency of semiconductor devices.

Collaborations

Ching-Hsu has collaborated with her coworker, Kirk Hsu, to further innovate in the field of semiconductor technology.

Conclusion

Ching-Hsu Chan's contributions to semiconductor fabrication through her patent demonstrate her expertise and commitment to innovation. Her work continues to influence the industry and pave the way for future advancements.