The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2002
Filed:
Nov. 22, 2000
Applicant:
Inventors:
Ching-Hsu Chan, Taipei, TW;
Kirk Hsu, Hsinchu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A method of fabricating a self-aligned contact (SAC) and gate structure is described. A gate oxide layer, a conductive gate a cap layer and a source/drain are formed on a substrate. A conformal buffer layer is formed. An undoped polysilicon spacer is formed. A dielectric layer is formed over the substrate. Photolithography and etching technologies are used to form a self-aligned opening in the dielectric layer and conformal buffer layer. The self-aligned contact opening is filled with a conductive layer, to form a self-aligned contact.