Auburn, AL, United States of America

Chin-Che Tin

This inventor holds 3 USPTO granted patents. Top assignees: Auburn University, Vanderbilt University. Active years: 2007-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chin-Che Tin. Retrieved from https://idiyas.com/inventor/chin-che-tin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 33.3

Average Co-Inventor Count = 8.3

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2007-2011

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3 patents (USPTO):Explore Patents

Title: Innovations of Chin-Che Tin in Silicon Carbide Technology

Introduction

Chin-Che Tin is a notable inventor based in Auburn, Alabama, recognized for his contributions to the field of semiconductor technology. He holds a total of 3 patents, focusing primarily on advancements in silicon carbide (SiC) applications. His work has significantly impacted the efficiency and performance of semiconductor devices.

Latest Patents

One of Chin-Che Tin's latest patents involves a method for low temperature impurity doping of silicon carbide. This innovative technique allows for the introduction of external impurities into SiC at temperatures ranging from 1150 to 1400°C. The advantages of this method include a low temperature diffusion procedure that offers greater control over the doping process, prevention of surface roughness, reduction of surface defects, and improved device performance with higher yield. The process entails depositing a ceramic layer containing the desired impurity along with elements such as oxygen, which facilitates the diffusion of impurities into the SiC by creating vacancies.

Another significant patent focuses on the incorporation of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects. This method enhances the manufacturing of silicon carbide semiconductor devices by forming a layer of silicon dioxide on a SiC substrate, with nitrogen incorporated through annealing in various gases. This innovation aims to improve the reliability and performance of semiconductor devices.

Career Highlights

Chin-Che Tin has had a distinguished career, contributing to research and development at prominent institutions. He has worked at Auburn University and Vanderbilt University, where he has been involved in cutting-edge research in semiconductor technology. His expertise in silicon carbide has positioned him as a key figure in the field.

Collaborations

Throughout his career, Chin-Che Tin has collaborated with esteemed colleagues, including Gilyong Y Chung and John Robert Williams. These partnerships have fostered innovation and advancement in semiconductor research.

Conclusion

Chin-Che Tin's contributions to silicon carbide technology through his patents and research have made a significant impact on the semiconductor industry. His innovative methods enhance device performance and reliability, showcasing the importance of his work in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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