The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
May. 05, 2005
Gilyong Chung, Midland, MI (US);
Chin-che Tin, Auburn, AL (US);
John R. Williams, Opelika, AL (US);
Kyle Mcdonald, Albuquerque, NM (US);
Massimiliano Di Ventra, Nashville, TN (US);
Robert A. Weller, Brentwood, TN (US);
Socrates T. Pantelides, Franklin, TN (US);
Leonard C. Feldman, Nashville, TN (US);
Gilyong Chung, Midland, MI (US);
Chin-Che Tin, Auburn, AL (US);
John R. Williams, Opelika, AL (US);
Kyle McDonald, Albuquerque, NM (US);
Massimiliano Di Ventra, Nashville, TN (US);
Robert A. Weller, Brentwood, TN (US);
Socrates T. Pantelides, Franklin, TN (US);
Leonard C. Feldman, Nashville, TN (US);
Vanderbilt University, Nashville, TN (US);
Auburn University, Auburn, AL (US);
Abstract
In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.