The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Jun. 08, 2007
Gilyong Y. Chung, Tampa, FL (US);
Chin-che Tin, Auburn, AL (US);
John R. Williams, Opelika, AL (US);
Kyle Mcdonald, Nashville, TN (US);
Massimiliano DE Ventra, Nashville, TN (US);
Robert A. Weller, Brentwood, TN (US);
Socrates T. Pantelides, Franklin, TN (US);
Leonard C. Feldman, Nashville, TN (US);
Gilyong Y. Chung, Tampa, FL (US);
Chin-Che Tin, Auburn, AL (US);
John R. Williams, Opelika, AL (US);
Kyle McDonald, Nashville, TN (US);
Massimiliano De Ventra, Nashville, TN (US);
Robert A. Weller, Brentwood, TN (US);
Socrates T. Pantelides, Franklin, TN (US);
Leonard C. Feldman, Nashville, TN (US);
Vanderbilt University, Nashville, TN (US);
Auburn University, Auburn, AL (US);
Abstract
In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia.