Chihchiang Yang

Title: Chihchiang Yang: Innovator in Shallow Trench Structure Technology

Introduction

Chihchiang Yang is a notable inventor based in Anhui, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to shallow trench structures. His work is essential for advancing the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

Chihchiang Yang holds a patent titled "Method and apparatus for making shallow trench structure." This patent outlines a method that includes several key steps: preparing a substrate, forming a first material layer on one side of the substrate, and forming a second material layer on the first material layer. The process involves creating a shallow trench in the second material layer, the first material layer, and the substrate. It also details a first lateral etching on the second material layer using wet etching and a second lateral etching on the first material layer using dry etching. This innovative approach addresses the issue of silicon damage in shallow trenches caused by traditional lateral etching technologies.

Career Highlights

Chihchiang Yang is currently associated with Nexchip Semiconductor Corporation, where he applies his expertise in semiconductor manufacturing. His work at Nexchip has positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

Chihchiang Yang collaborates with talented professionals in his field, including Tzujen Lin and Chengwei Lin. These collaborations enhance the innovation and effectiveness of their projects.

Conclusion

Chihchiang Yang's contributions to semiconductor technology, particularly through his patent on shallow trench structures, demonstrate his commitment to innovation in the field. His work continues to influence the industry positively.