Hsinchu, Taiwan

Chih-Hsien Chen

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chih-Hsien Chen. Retrieved from https://idiyas.com/inventor/chih-hsien-chen-syymsz45

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 11.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations of Chih-Hsien Chen in MEMS Technology

Introduction

Chih-Hsien Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of micro-electro mechanical systems (MEMS). His innovative work has led to the development of a unique mechanism for forming MEMS devices.

Latest Patents

Chih-Hsien Chen holds 1 patent for his invention titled "Mechanism for forming MEMS device." This patent describes embodiments of mechanisms for creating a MEMS device that includes a substrate and a MEMS substrate. The MEMS substrate features a movable element, a fixed element, and at least one spring connecting the movable and fixed elements. Additionally, the MEMS device incorporates a polysilicon layer on the movable element.

Career Highlights

Chih-Hsien Chen is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to further his research and development in MEMS technology.

Collaborations

Chih-Hsien Chen has collaborated with notable colleagues such as Hsi-Cheng Hsu and Shyh-Wei Cheng. Their teamwork has contributed to advancements in the field of MEMS.

Conclusion

Chih-Hsien Chen's innovative contributions to MEMS technology highlight his role as a significant inventor in the industry. His patent and collaborations reflect his commitment to advancing technology in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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