Chih-Hsiang Chang

Title: Innovations of Chih-Hsiang Chang

Introduction

Chih-Hsiang Chang is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs in transistor architecture. His work has implications for the efficiency and performance of electronic devices.

Latest Patents

Chih-Hsiang Chang holds a patent for a "Grounded gate NMOS transistor having source pulled back region." This invention features a grounded gate NMOS transistor that includes a P-type substrate and a P-well region. The design incorporates a gate finger that traverses the P-well region, with specific doping regions that enhance its functionality. The Ndrain and Nsource doping regions are strategically placed to optimize performance, making this invention a valuable asset in semiconductor applications.

Career Highlights

Chih-Hsiang Chang is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His role involves research and development, where he applies his expertise to advance technology in integrated circuits. His contributions have been recognized within the industry, showcasing his commitment to innovation.

Collaborations

Chih-Hsiang Chang has collaborated with notable colleagues such as Hou-Jen Chiu and Mei-Ling Chao. These partnerships have fostered a creative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Chih-Hsiang Chang's work exemplifies the spirit of innovation in the semiconductor field. His patent on the grounded gate NMOS transistor highlights his ability to contribute to cutting-edge technology. Through his career at United Microelectronics Corporation, he continues to push the boundaries of what is possible in electronics.