United Microelectronics Corp.

Chih-Hsiang Chang

Tien-Hao Tang

Kuan-Cheng Su

Mei-Ling Chao

Hou-Jen Chiu

A grounded gate NMOS transistor includes a P-type substrate, P-well region in the P-type substrate, and a gate finger traversing the P-well region. The gate finger has a first spacer on a first sidewall and a second spacer on a second sidewall opposite to the first sidewall. An Ndrain doping region is disposed in the P-type substrate and is adjacent to the first sidewall of the gate finger. The Ndrain doping region is contiguous with a bottom edge of the first spacer. An Nsource doping region is disposed in the P-type substrate opposite to the Ndrain doping region. The Nsource doping region is kept a predetermined distance from a bottom edge of the second spacer. A Ppick-up ring is disposed in the P-well region and surrounds the gate finger, the Ndrain doping region, and the Nsource doping region.

Growing community of inventors

Tainan, Taiwan

Chih-Hsiang Chang