Taipei, Taiwan

Chih-Hong Wang

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chih-Hong Wang. Retrieved from https://idiyas.com/inventor/chih-hong-wang-i2qlqk7s

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chih-Hong Wang: Innovator in Semiconductor Technology

Introduction: Chih-Hong Wang is an inventor based in Taipei, Taiwan. He is known for his contributions to semiconductor technology, particularly in the area of gap-fill dielectrics and cross-die bonding methods. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications: Chih-Hong Wang has submitted several notable patent applications. One of his latest applications is titled "GAP-FILL DIELECTRICS FOR DIE STRUCTURES AND METHODS OF FORMING THE SAME." This application describes a device that includes an outer gap-fill dielectric with a specific coefficient of thermal expansion, integrated circuit dies, and an inner gap-fill dielectric that has a greater coefficient of thermal expansion. Another significant application is "SEMICONDUCTOR DEVICE INCLUDING CROSS-DIE BONDING RING AND METHODS FOR FORMING THE SAME." This application outlines a semiconductor die that features lower dies separated by a dielectric region, a vertically stacked cross die, and a bonding ring that connects the cross die to the lower dies.

Conclusion: Chih-Hong Wang is an innovative inventor whose work in semiconductor technology showcases his potential to contribute significantly to the field. His latest patent applications reflect his commitment to advancing technology, even as he seeks to secure granted patents in the future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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