Chih-An Huang

Title: Innovations of Chih-An Huang

Introduction

Chih-An Huang is a notable inventor based in Taipei County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work primarily focuses on processes that enhance the efficiency and effectiveness of silicon oxide applications.

Latest Patents

One of his latest patents is a silicon oxide gap-filling process. This process involves a chemical vapor deposition (CVD) method that includes an etching effect to fill trenches with silicon oxide. The reaction gases utilized in this CVD process consist of deposition gases and a He/H mixed gas, which serves as a sputtering-etching gas. The percentage of the He/H mixed gas increases with the aspect ratio of the trench, optimizing the filling process. Another significant patent is a method for forming a shallow trench isolation structure. This method includes the formation of a pad oxide layer and a mask layer on a substrate, followed by the creation of a trench through patterning. After a rapid wet thermal process, a liner layer is formed on the exposed surfaces, and an oxide layer is deposited to fill the trench. A planarization process is then performed to expose the mask layer, which is subsequently removed to complete the shallow trench isolation structure.

Career Highlights

Chih-An Huang has worked with prominent companies in the semiconductor industry, including United Microelectronics Corporation and United Microelectric Corporation. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor fabrication.

Collaborations

Chih-An Huang has collaborated with notable professionals in his field, including Tsung-Tang Hsieh and Cheng-Yuan Tsai. These collaborations have contributed to the advancement of technology in semiconductor processes.

Conclusion

Chih-An Huang's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in silicon oxide applications and trench isolation structures.