United Microelectronics Corp.

United Microelectric Corp.

Chih-An Huang

Teng-Chun Tsai

Neng-Kuo Chen

Cheng-Yuan Tsai

Tsung-Tang Hsieh

Hsiu-Chuan Chu

Hsin-Chang Wu

Hsiao-Ling Lu

A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/Hmixed gas as a sputtering-etching gas, wherein the percentage of the He/Hmixed gas in the total reaction gases is raised with the increase of the aspect ratio of the trench.

Silicon oxide gap-filling process

A method of fabricating a shallow trench isolation structure is disclosed. On a substrate, a pad oxide layer and a mask layer are successively formed. The pad oxide layer, the mask layer and a portion of the substrate are patterned to form a trench. After performing a rapid wet thermal process, a liner layer is formed on the exposed surface of the substrate, including the exposed silicon surface of the substrate in the trench and sidewalls and the surface of the mask layer. An oxide layer is deposited over the trench and the substrate and fills the trench. A planarization process is performed until the mask layer is exposed. The mask layer and the pad oxide layer are removed to complete the shallow trench isolation structure.

Method for forming shallow trench isolation structure

A method for improving the coating capability of low dielectric layer is disclosed. The method includes steps of an etching stop layer is deposited a semiconductor substrate, an adhesion promoter layer is spun-on the etching stop layer. The pre-wetting process being performed on the adhesion promoter layer to enhance the coating capability of the low-k dielectric layer, and thus improve the coating quality through the pre-wetting process of baked adhesion promoter layer before the low-k dielectric layer is applied.

Method for improving the coating capability of low-k dielectric layer

A method of coating an organic polymeric low-k dielectric layer starts by depositing a protective layer composed of silicon nitride (SiN) or silicon carbide (SiC) on a substrate. A hydrophilic surface is produced across a top surface of the protective layer by performing a fast surface treatment that subjects the surface to an oxygen-containing plasma at a pre-selected low radio frequency power. An adhesion promoter coating layer is formed over the top surface of the protective layer. The coating layer has promoter molecules, each promoter molecule having at least one hydrophobic group and one hydrophilic group. The low-k dielectric layer is spin-on coated onto the coating layer. Formation of the hydrophilic surface alters an orientation of the adhesion promoter molecules to facilitate the hydrophilic group of each of the adhesion promoter molecules facing the hydrophilic surface while the hydrophobic group of the adhesion promoter molecules faces the low-k dielectric layer.

Growing community of inventors

Taipei County, Taiwan

Chih-An Huang