The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Oct. 02, 2003
Applicants:
Hsiu-chuan Chu, Hsinchu, TW;
Chih-an Huang, Taipei County, TW;
Teng-chun Tsai, Hsinchu, TW;
Neng-kuo Chen, Hsinchu, TW;
Inventors:
Hsiu-Chuan Chu, Hsinchu, TW;
Chih-An Huang, Taipei County, TW;
Teng-Chun Tsai, Hsinchu, TW;
Neng-Kuo Chen, Hsinchu, TW;
Assignee:
United Microelectric Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/Hmixed gas as a sputtering-etching gas, wherein the percentage of the He/Hmixed gas in the total reaction gases is raised with the increase of the aspect ratio of the trench.