Location History:
- Taichung, TW (2012)
- Hsinchu, TW (2014)
Company Filing History:
Years Active: 2012-2014
Title: Innovations of Chien-Yu Hsieh in SRAM Technology
Introduction
Chien-Yu Hsieh is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of static random access memory (SRAM) technology. With a total of 2 patents, his work focuses on enhancing the performance and efficiency of SRAM cells.
Latest Patents
One of his latest patents is the Independently-controlled-gate SRAM. This invention provides an IG 7T FinFET SRAM, which adopts independently-controlled-gate super-high-VFinFETs to achieve a stacking-like property. This innovation effectively eliminates read disturb and half-select disturb. Additionally, it utilizes keeper circuits and read control voltage to reduce leakage current of the bit lines during read operations. Furthermore, this invention addresses the issue of read errors at low operation voltage, which is common in conventional 6T SRAM designs.
Another notable patent is the Schmitt trigger-based FinFET SRAM cell. This invention features an 8-FinFET structure, where a FinFET has the functions of two independent gates. The new SRAM cell design uses only 8 FinFETs per cell, compared to the 10-FinFET structure in previous works. As a result, this design saves chip area and increases chip density. Moreover, it effectively resolves the conventional problem of read errors in 6T SRAM cells at low operating voltages.
Career Highlights
Chien-Yu Hsieh is affiliated with National Yang Ming Chiao Tung University, where he continues to advance research in semiconductor technology. His innovative approaches have garnered attention in the field, contributing to the development of more efficient memory solutions.
Collaborations
Chien-Yu Hsieh has collaborated with notable colleagues such as Ching-Te Chuang and Ming-Long Fan. Their joint efforts have further propelled advancements in SRAM technology.
Conclusion
Chien-Yu Hsieh's contributions to SRAM technology through his innovative patents demonstrate his commitment to enhancing memory performance. His work not only addresses existing challenges but also paves the way for future advancements in the field.
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