The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Sep. 07, 2010
Ching-te Chuang, Taipei County, TW;
Chien-yu Hsieh, Taichung, TW;
Ming-long Fan, Taichung, TW;
Pi-ho HU, Hsinchu, TW;
Pin Su, Hsinchu County, TW;
Ching-Te Chuang, Taipei County, TW;
Chien-Yu Hsieh, Taichung, TW;
Ming-Long Fan, Taichung, TW;
Pi-Ho Hu, Hsinchu, TW;
Pin Su, Hsinchu County, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
The present invention provides a Schmitt trigger-based FinFET static random access memory (SRAM) cell, which is an 8-FinFET structure. A FinFET has the functions of two independent gates. The new SRAM cell uses only 8 FinFET per cell, compared with the 10-FinFET structure in previous works. As a result, the cell structure of the present invention can save chip area and raise chip density. Furthermore, this new SRAM cell can effectively solve the conventional problem that the 6T SRAM cell is likely to have read errors at a low operating voltage.