Chiao-Lin Ho

Title: Chiao-Lin Ho: Innovator in Polycide Gate Technology

Introduction

Chiao-Lin Ho is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of polycide gate structures. His innovative methods have paved the way for advancements in integrated circuit design.

Latest Patents

Chiao-Lin Ho holds a patent for a "Method for forming polycide gate." This patent describes a comprehensive process that includes forming a gate oxide layer on a substrate, followed by the deposition of a polysilicon layer. The method further involves creating a silicide layer over the polysilicon layer and an amorphous silicon layer on top of the silicide layer. The layers are then patterned and etched to define a gate region, which is used as an implant mask for forming source/drain regions. Finally, a cap silicon nitride layer is applied over the amorphous silicon layer. This innovative approach enhances the performance and reliability of semiconductor devices.

Career Highlights

Throughout his career, Chiao-Lin Ho has worked with prominent companies in the technology sector. He has been associated with Mosel Vitelic Corporation and Siemens Aktiengesellschaft, where he contributed his expertise in semiconductor fabrication and design.

Collaborations

Chiao-Lin Ho has collaborated with various professionals in his field, including his coworker J S Shiao. These collaborations have further enriched his work and contributed to the advancement of semiconductor technologies.

Conclusion

Chiao-Lin Ho's contributions to the field of semiconductor technology, particularly through his patent for forming polycide gates, highlight his innovative spirit and dedication to advancing technology. His work continues to influence the industry and inspire future innovations.