The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2000
Filed:
May. 11, 1999
Applicant:
Inventors:
Chiao-Lin Ho, Hsinchu, TW;
J S Shiao, Hsinchu, TW;
Assignees:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438592 ; 438655 ; 438657 ; 438682 ; 257412 ; 257413 ;
Abstract
A method for forming a polycide-gate structure is disclosed. The method comprises forming a gate oxide layer on a substrate. Then a polysilicon layer is formed on the gate oxide layer. Next a silicide layer is formed over the polysilicon layer. Thereafter, an amorphous silicon layer is formed on the silicide layer. Then, the amorphous silicon layer, the silicide layer, the polysilicon layer and the gate oxide layer are patterned and etched to define a gate region by using a photoresist mask. Source/drain regions are formed using the gate region as an implant mask. Finally, a cap silicon nitride layer is formed over the amorphous silicon layer.