Taichung, Taiwan

Chian-Hun Lai

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chian-Hun Lai. Retrieved from https://idiyas.com/inventor/chian-hun-lai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Chian-Hun Lai: Innovator in Semiconductor Technology

Introduction

Chian-Hun Lai is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of mask substrate repair. His innovative methods have the potential to enhance the efficiency and reliability of semiconductor manufacturing processes.

Latest Patents

Chian-Hun Lai holds a patent titled "Method for repairing opaque defects on semiconductor mask reticles." This patent describes a method for identifying and repairing opaque defects on a mask substrate. The process involves examining opaque patterns, identifying defects based on light reflection rates, and determining the residue height of the defects to devise a suitable repair formula.

Career Highlights

Chian-Hun Lai is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on improving manufacturing techniques and ensuring high-quality production standards.

Collaborations

Chian-Hun Lai collaborates with talented colleagues such as Shan-Chan Suc and Chun-Hung Kung. Their combined expertise contributes to advancements in semiconductor technology and innovation.

Conclusion

Chian-Hun Lai's contributions to semiconductor technology through his innovative patent demonstrate his commitment to enhancing manufacturing processes. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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