The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
Dec. 30, 2003
Wei-lian Lin, Hsinchu, TW;
Chian-hun Lai, Taichung, TW;
Shao-chi Wei, Taichung, TW;
Chi-kang Chang, Rueitang Township, Taipei County, TW;
Chia-hsien Chen, Puli town, Nan-Tou County, TW;
Shan-chan Suc, Toufen Township, Miaoli County, TW;
Chun-hung Kung, Hsinchu, TW;
Wei-Lian Lin, Hsinchu, TW;
Chian-Hun Lai, Taichung, TW;
Shao-Chi Wei, Taichung, TW;
Chi-Kang Chang, Rueitang Township, Taipei County, TW;
Chia-Hsien Chen, Puli town, Nan-Tou County, TW;
Shan-Chan Suc, Toufen Township, Miaoli County, TW;
Chun-Hung Kung, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method is disclosed for repairing an opaque defect on a mask substrate. After examining one or more opaque patterns in a predetermined area of the mask substrate, at least one opaque defect in the opaque patterns is identified based on a difference between its light reflection rate and a reference reflection rate. A residue height of the opaque defect is further determined based on its light transmission rate, and a repair formula such as an etching dosage is devised based on the determined residue height.