Hsinchu, Taiwan

Chia Hung Liu

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chia Hung Liu. Retrieved from https://idiyas.com/inventor/chia-hung-liu-2lr1xiev

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chia Hung Liu: Semiconductor Process Chamber Innovation

Introduction

Chia Hung Liu is an inventor based in Hsinchu, Taiwan. He is associated with Taiwan Semiconductor Manufacturing Company Limited and is named on 1 patent concerning semiconductor processing equipment.

Latest Patents

Liu’s listed patent, “Semiconductor Process Chamber with Improved Reflector,” describes a substrate processing chamber designed for epitaxial deposition. The chamber uses a reflector positioned above the substrate support, with a flange containing holes for removable support kits. These kits secure the reflector at a height intended to reduce obstruction of radiation from surrounding heating elements and distribute more energy across the substrate support. A cooling plate is coupled to the reflector’s flange and includes an opening that accommodates the reflector body.

Career Highlights

Liu’s patent reflects work on chamber design and thermal management for semiconductor manufacturing. Its adjustable reflector-support arrangement addresses how heating energy is delivered within an epitaxial deposition chamber.

Collaborations

Liu’s listed coworkers include Sou-Chuan Chiang and Yen Chuang. His company affiliation connects his work to Taiwan Semiconductor Manufacturing Company Limited.

Conclusion

Chia Hung Liu’s recorded invention focuses on improving reflector positioning and energy distribution in a semiconductor process chamber, contributing to equipment design for epitaxial deposition.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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