Semiconductor process chamber with improved reflector

Abstract

A substrate processing chamber for performing an epitaxial deposition process is provided. The chamber includes a substrate support having an upper surface, a reflector disposed above the substrate support. The reflector includes a body comprising an upper opening having a first diameter, a bottom opening having a second diameter less than the first diameter, and a flange protruding radially from an outer circumference of the body around the upper opening, wherein the flange comprises a plurality of holes. The chamber includes a plurality of heating elements disposed around the reflector, each heating element being operable to emit energy radiation, a plurality of support kits, each support kit comprising a bar member and a fastener removably coupled to the bar member, wherein the bar member and fastener are configured to secure to the respective hole in the flange so that the reflector is at a height that reduces blockage of the energy radiation and increases an amount of the energy radiation to be distributed across the upper surface of the substrate support. The chamber further includes a cooling plate coupled to the flange by the plurality of support kits, wherein the cooling plate comprises an opening sized to allow passage of the body of the reflector.