Kaohsiung, Taiwan

Chi-Rung Shie

This inventor holds 1 USPTO granted patent. Top assignee: Cmc Materials, Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chi-Rung Shie. Retrieved from https://idiyas.com/inventor/chi-rung-shie

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Chi-Rung Shie: Innovator in Chemical Mechanical Polishing

Introduction

Chi-Rung Shie is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of chemical mechanical polishing (CMP) through his innovative patent. His work is essential in advancing technologies that require precise surface finishing.

Latest Patents

Chi-Rung Shie holds a patent for a CMP composition that includes an anionic abrasive. This chemical mechanical polishing composition comprises a liquid carrier, anionic particles dispersed in the liquid carrier, an anionic polymer or surfactant, and a cationic polymer. This invention is crucial for improving the efficiency and effectiveness of polishing processes in various applications.

Career Highlights

Chi-Rung Shie is currently employed at CMC Materials, Inc., where he continues to develop and refine technologies related to chemical mechanical polishing. His expertise in this area has positioned him as a valuable asset to his company and the industry.

Collaborations

Some of his coworkers include Yang-Yao Lee and Hsin-Yen Wu. Their collaborative efforts contribute to the innovative environment at CMC Materials, Inc., fostering advancements in CMP technologies.

Conclusion

Chi-Rung Shie's contributions to the field of chemical mechanical polishing through his patent and work at CMC Materials, Inc. highlight his role as an influential inventor. His innovations continue to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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