Chi-Hsiang Weng

Title: The Innovative Contributions of Chi-Hsiang Weng

Introduction

Chi-Hsiang Weng is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory cell technology, holding a total of six patents. His work has been instrumental in advancing the efficiency and functionality of memory cell arrays.

Latest Patents

Weng's latest patents include a memory cell array circuit and a method of forming the same. The memory cell array consists of a first and a second column of memory cells, along with a first and a second bit line, a source line, and a first set of vias. The second bit line features a first conductive line on a first metal layer and a second conductive line on a second metal layer. These conductive lines overlap the source of a transistor in the memory cell of the second column. The source line connects to both columns of memory cells, and the first set of vias is electrically linked to the conductive lines. Notably, a pair of vias from this set is positioned above where the first conductive line overlaps each memory cell in the second column. The method of forming a memory cell array circuit follows a similar structure, ensuring efficient integration of memory cells.

Career Highlights

Chi-Hsiang Weng has worked with notable companies such as Taiwan Semiconductor Manufacturing Company Ltd. and the Industrial Technology Research Institute. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Weng has collaborated with esteemed colleagues, including Yu-Der Chih and Hsing-Chen Lin. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Chi-Hsiang Weng's contributions to memory cell technology and his collaborations with industry leaders highlight his importance in the field of semiconductor innovation. His patents reflect a commitment to advancing technology and improving memory cell efficiency.