The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

May. 02, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chi-Hsiang Weng, Hsinchu, TW;

Yu-Der Chih, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); G06F 30/39 (2020.01); H01L 27/24 (2006.01); H01L 27/22 (2006.01); H01L 27/115 (2017.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01);
U.S. Cl.
CPC ...
G06F 30/39 (2020.01); G11C 13/003 (2013.01); H01L 27/115 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); G11C 2213/79 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01);
Abstract

A memory cell array includes a first column of memory cells, a second column of memory cells, a first bit line, a second bit line and a source line. The second column of memory cells is separated from the first column of memory cells in a first direction. The first column of memory cells and the second column of memory cells are arranged in a second direction. The first bit line is coupled to the first column of memory cells, and extends in the second direction. The second bit line is coupled to the second column of memory cells, and extends in the second direction. The source line extends in the second direction, is coupled to the first column of memory cells and the second column of memory cells.


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