Shanghai, China

Chenxi Yang

This inventor holds 1 USPTO granted patent. Top assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2024.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations of Chenxi Yang in Semiconductor Fabrication

Introduction

Chenxi Yang is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor fabrication. His innovative methods have the potential to enhance the efficiency and effectiveness of semiconductor structures.

Latest Patents

Chenxi Yang holds a patent for a semiconductor fabrication method and structure that utilizes multiple sacrificial layers to form sidewall spacers. This method includes several steps, such as providing a to-be-etched layer, forming core layers, and creating sacrificial structures. The process aims to improve the precision and quality of semiconductor manufacturing.

Career Highlights

Throughout his career, Chenxi Yang has worked with prominent companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation in Shanghai and Beijing. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations.

Collaborations

Chenxi has collaborated with talented individuals in his field, including Haiyang Zhang and Longjuan Tang. These partnerships have fostered a creative environment that encourages the development of new ideas and technologies.

Conclusion

Chenxi Yang's contributions to semiconductor fabrication highlight his innovative spirit and dedication to advancing technology. His work continues to influence the industry and pave the way for future advancements.

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