The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Mar. 22, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Abstract
Semiconductor structures and fabrication methods thereof are provided. The method may include providing a to-be-etched layer; forming a plurality of core layers on the to-be-etched layer, wherein a first opening and a second opening are formed between different adjacent core layers and a width of the first opening is smaller than a width of the second opening; forming a first sacrificial material layer on the to-be-etched layer and the plurality of core layers; forming a second sacrificial layer on a portion of the first sacrificial material layer in the first opening to form a sacrificial structure in the first opening; removing the plurality of core layers after forming the sacrificial structure; forming sidewall spacers on sidewall surfaces of the sacrificial structure after removing the plurality of core layers; and removing the sacrificial structure after forming the sidewall spacers.