Company Filing History:
Years Active: 2025
Title: Innovations of Chengzhan Li in Silicon Carbide Technology
Introduction
Chengzhan Li is a prominent inventor based in Hunan, China, known for his contributions to semiconductor technology. He has been instrumental in developing advanced silicon carbide MOSFET devices, which are crucial for high-efficiency power electronics. With a total of 2 patents to his name, his work continues to influence the field of power semiconductor devices.
Latest Patents
Chengzhan Li's latest patents include innovative designs for silicon carbide MOSFET devices. One of his patents describes a cell structure of a silicon carbide MOSFET device, which features a first conductivity type drift region located above a first conductivity type substrate. This design incorporates a main trench in the surface of the drift region, with a Schottky metal provided on the bottom and sidewalls of the trench. Additionally, a second conductivity type well region surrounds the main trench, enhancing the device's performance.
Another significant patent focuses on a power semiconductor device that includes a drift region on a substrate layer, along with a second conducting type well region and a first JFET region. This design aims to improve the efficiency and reliability of power semiconductor applications, showcasing Chengzhan Li's commitment to advancing technology in this area.
Career Highlights
Chengzhan Li is currently employed at Zhuzhou CRRC Times Semiconductor Co. Ltd., where he continues to innovate in the field of semiconductor technology. His work has garnered attention for its potential applications in various industries, particularly in energy-efficient systems.
Collaborations
Chengzhan Li has collaborated with notable colleagues, including Yafei Wang and Changwei Zheng. These partnerships have contributed to the development of cutting-edge technologies in the semiconductor sector.
Conclusion
Chengzhan Li's contributions to silicon carbide technology and his innovative patents position him as a key figure in the semiconductor industry. His work not only enhances the performance of power devices but also paves the way for future advancements in energy efficiency.