The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Dec. 25, 2019
Zhuzhou Crrc Times Semiconductor Co., Ltd., Hunan, CN;
ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD., Zhuzhou, CN;
Abstract
A cell structure of a silicon carbide MOSFET device, comprising a first conductivity type drift region () located above a first conductivity type substrate (). A main trench is provided in the surface of the first conductivity type drift region (); a Schottky metal () is provided on the bottom and sidewalls of the main trench; a second conductivity type well region () is provided in the surface of the first conductivity type drift region () and around the main trench; a source region () is provided in the surface of the well region (); a source metal () is provided above the source region (); a gate insulating layer () and a gate () split into two parts are provided above the sides of the source region (), the well region (), and the first conductivity type drift region () close to the main trench.