Zhuzhou Crrc Times Semiconductor Co. Ltd.

Chengzhan Li

Yafei Wang

Haihui Luo

Xiaoping Dai

Changwei Zheng

Shasha Jiao

Yangang Wang

A cell structure of a silicon carbide MOSFET device, comprising a first conductivity type drift region () located above a first conductivity type substrate (). A main trench is provided in the surface of the first conductivity type drift region (); a Schottky metal () is provided on the bottom and sidewalls of the main trench; a second conductivity type well region () is provided in the surface of the first conductivity type drift region () and around the main trench; a source region () is provided in the surface of the well region (); a source metal () is provided above the source region (); a gate insulating layer () and a gate () split into two parts are provided above the sides of the source region (), the well region (), and the first conductivity type drift region () close to the main trench.

Silicon carbide MOSFET device and cell structure thereof

A cell structure of a silicon carbide MOSFET device, comprising a drift region () located on a substrate layer (), a second conducting type well region () and a first JFET region () that are located in the drift region (), an enhancement region located within a surface of the well region (), a gate insulating layer () located on a first conducting type enhancement region (), the well region () and the first JFET region () and being in contact therewith at the same time, a gate () located on the gate insulating layer, source metal () located on the enhancement region, Schottky metal () located on a second conducting type enhancement region () and the drift region (), a second JFET region () located on a surface of the drift region () between the Schottky metals (), and drain metal ().

Cell structure of silicon carbide MOSFET device, and power semiconductor device

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Hunan, China

Chengzhan Li