The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Jun. 10, 2020
Zhuzhou Crrc Times Semiconductor Co., Ltd., Hunan, CN;
Yafei Wang, Hunan, CN;
Changwei Zheng, Hunan, CN;
Shasha Jiao, Hunan, CN;
Chengzhan Li, Hunan, CN;
Haihui Luo, Hunan, CN;
ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD., Zhuzhou, CN;
Abstract
A cell structure of a silicon carbide MOSFET device, comprising a drift region () located on a substrate layer (), a second conducting type well region () and a first JFET region () that are located in the drift region (), an enhancement region located within a surface of the well region (), a gate insulating layer () located on a first conducting type enhancement region (), the well region () and the first JFET region () and being in contact therewith at the same time, a gate () located on the gate insulating layer, source metal () located on the enhancement region, Schottky metal () located on a second conducting type enhancement region () and the drift region (), a second JFET region () located on a surface of the drift region () between the Schottky metals (), and drain metal ().