Location History:
- Hunan, CN (2019)
- Zhuzhou, CN (2020)
Company Filing History:
2 out of 18 
1 out of 3,116 
Years Active: 2019-2020
Title: Chengzhan Li: Innovator in Silicon Carbide Technology
Introduction
Chengzhan Li is a prominent inventor based in Zhuzhou, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide MOSFET devices. With a total of 2 patents to his name, his work is paving the way for advancements in high voltage and high frequency applications.
Latest Patents
Li's latest patents include a self-aligned silicon carbide MOSFET device and a method for manufacturing the same. This innovative device features an optimized P-region and is designed to enhance the conduction and breakdown characteristics of the MOSFET. The device is constructed from multiple silicon carbide MOSFET cells arranged in parallel, which improves performance and efficiency. The manufacturing method simplifies the production process while ensuring precise control over channel size, enabling the creation of both lateral and vertical power MOSFETs.
Career Highlights
Throughout his career, Chengzhan Li has worked with notable organizations such as Zhuzhou CRRC Times Electric Co., Ltd and the Chinese Academy of Sciences. His experience in these institutions has allowed him to collaborate on cutting-edge research and development projects, further solidifying his reputation as an expert in his field.
Collaborations
Li has collaborated with esteemed colleagues, including Guoyou Liu and Yidan Tang. These partnerships have contributed to the successful development of his innovative technologies and patents.
Conclusion
Chengzhan Li's contributions to silicon carbide technology exemplify his dedication to innovation in the semiconductor industry. His patents and career achievements highlight the importance of his work in advancing high-performance electronic devices.