Silicon carbide mosfet device and method for manufacturing the same

Abstract

The present disclosure discloses a self-aligned silicon carbide MOSFET device with an optimized Pregion and a manufacturing method thereof. The self-aligned silicon carbide MOSFET device is formed by a plurality of silicon carbide MOSFET device cells connected in parallel, and these silicon carbide MOSFET device cells are arranged evenly. The silicon carbide MOSFET device cell comprises two source electrodes, one gate electrode, one gate oxide layer, two Nsource regions, two Pcontact regions, two P wells, one Ndrift layer, one buffer layer, one Nsubstrate, one drain electrode and one isolation dielectric layer. By optimizing the Pregion, the present disclosure forms a good source ohmic contact, reduces the on-resistance, and also shorts the source electrode and the P well to prevent the parasitic transistor effect of the parasitic NPN and PiN, which may take both conduction characteristics and the breakdown characteristics of the device into consideration, and may be applied to a high voltage, high frequency silicon carbide MOSFET device. The self-aligned manufacturing method used in the present disclosure simplifies the process, controls a size of a channel accurately, and may produce a lateral and vertical power MOSFET.