Cheng-Hung Lin

Title: Cheng-Hung Lin: Innovator in Semiconductor Technology

Introduction

Cheng-Hung Lin is a prominent inventor based in Changhua, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on innovative semiconductor devices and structures that enhance performance and efficiency.

Latest Patents

Among his latest patents, Cheng-Hung Lin has developed a nitrogen-containing semiconductor device. This device includes a first type doped semiconductor layer, a multiple quantum well layer, and a second type doped semiconductor layer. The multiple quantum well layer consists of barrier layers and well layers arranged alternately, with one of the well layers connected to the second type doped semiconductor layer. Another notable patent is a semiconductor structure that features a first-type semiconductor layer, a second-type semiconductor layer, a light emitting layer, and a hole supply layer. The light emitting layer is positioned between the first and second-type semiconductor layers, while the hole supply layer includes two distinct layers with specific chemical formulas.

Career Highlights

Cheng-Hung Lin has worked with notable companies in the semiconductor industry, including AU Optronics Corporation and Genesis Photonics Inc. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Cheng-Hung Lin has collaborated with talented individuals such as Chun-Hui Yang and Chi-Feng Huang. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Cheng-Hung Lin's contributions to semiconductor technology are noteworthy, with a strong portfolio of patents that reflect his innovative spirit. His work continues to influence the industry and pave the way for future advancements.