Au Optronics Corporation

Genesis Photonics Inc.

Cheng-Hung Lin

Chun-Hui Yang

Chi-Feng Huang

Yu-Yun Lo

Yu-Hung Lai

Chung-Wen Ko

Cheng-Yen Chen

Chi-Hao Cheng

Hsin-Chiao Fang

Cheng-Hsueh Lu

Jeng-Jie Huang

A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.

Semiconductor device containing nitrogen

A semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, a light emitting layer and a hole supply layer. The light emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The hole supply layer is disposed between the light emitting layer and the second-type semiconductor layer, and the hole supply layer includes a first hole supply layer and a second hole supply layer. The first hole supply layer is disposed between the light emitting layer and the second hole supply layer, and a chemical formula of the first hole supply layer is AlInGaN, wherein 0&#x2264;x1&#x3c;0.4, and 0&#x2264;y1&#x3c;0.4. The second hole supply layer is disposed between the first hole supply layer and the second-type semiconductor layer, a chemical formula of the second hole supply layer is AlInGaN, wherein 0&#x2264;x2&#x3c;0.4, 0&#x2264;y2&#x3c;0.4, and x1&#x3e;x2.

Semiconductor structure

A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.

Method of forming light emitting diode dies, light emitting diode wafer and light emitting diode die

An organic light emitting diode structure is disclosed. The hole transport layer of the organic light emitting diode structure is used as a first primary color light emitting layer. A second primary color light emitting unit and a third primary color light emitting unit are formed on the first primary color light emitting layer, and a part of the first primary color light emitting layer is exposed. A method for fabricating the organic light emitting diode structure is also disclosed.

Organic light emitting diode structure having light-emitting, hole transport layer and fabricating method thereof

An organic electroluminescent device (OELD) is provided. The OELD includes a substrate, an anode, a cathode, a hole transport layer, an electron transport layer and an emission layer. The anode and the cathode are disposed on the substrate. The hole transport layer is disposed between the anode and the cathode. The electron transport layer is disposed between the hole transport layer and the cathode. The emission layer is disposed between the hole transport layer and the electron transport layer. The emission layer includes a host and a dopant. The chemical structure of the dopant is shown as the formula [I]:  'M' is a metal atom whose atomic weight is greater than 40. 'S' is selected from a group consisting of alkyl, alkoxy, haloalkyl, halogen, hydrogen and any other substituents.

Emission material and organic electroluminescent device using the same

A phosphorescent OLED uses a phosphorescent dopant in the emissive layer, the dopant includes a metal complex containing a plurality of moieties linking to a transition metal ion. One or more of the moieties contain a ligand with a C&#x2014;SPcarbon center. The transition metal ion can be an iridium ion. The C&#x2014;SPcarbon is linked to a chalcogen atom in an ion form, a nitrogen-containing heterocylic ring and two functional groups, wherein each of the functional groups is selected from aryl, alkyl and heteroaryl. The tetrahedral structure of this carbon center hinders close packing and intermolecular interactions and, therefore, renders the transport of holes in the light-emitting device more efficient. With such chemical structure and property, the self-quenching characteristics of the dopant in high doping concentration can be effectively reduced.

Phosphorescent light-emitting device with doped iridium-complex

A white organic light-emitting diode includes two symmetric emission layers and a middle emission layer. The two symmetric emission layers emit a first color light with approximately the same frequency components. The middle emission layer is located between the two symmetric emission layers. The middle emission layer emits a second color light with frequency components different from main frequency components of the first color light. When the voltage applied to the organic light-emitting diode changes and leads to a decrease of luminescent intensity of one of the symmetric emission layers, the other symmetric emission layer automatically increases the luminescent intensity to compensate for the reduced light intensity.

White organic light-emitting diode

Organometalic compounds, having formula I  

Organometallic compounds and display device employing the same

An organic electro-luminescent device. The device comprises two electrodes and an organic electro-luminescent structure interposed therebetween. The electrodes are disposed on a substrate, one serving as an anode and the other as a cathode. The organic electro-luminescent structure comprises a fluorescent emissive layer, a phosphorescent emissive layer and a nondoped organic material layer interposed therebetween. The phosphorescent emissive layer has a host material. The nondoped organic material layer has a highest occupied molecular orbital (HOMO) energy level no higher than that of the host material in the phosphorescent emissive layer.

Organic electro-luminescent device

An organometallic complex having formula (I)

Growing community of inventors

Changhua, Taiwan

Cheng-Hung Lin