Taichung, Taiwan

Cheng-Hsun Tsai

USPTO Granted Patents = 5 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Location History:

  • Hsinchu, TW (1999)
  • Taichung, TW (1999 - 2000)

Company Filing History:


Years Active: 1999-2026

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5 patents (USPTO):Explore Patents

Title: Cheng-Hsun Tsai: Innovator in Chemical Vapor Deposition Technologies

Introduction

Cheng-Hsun Tsai is an esteemed inventor based in Taichung, Taiwan, known for his significant contributions to the field of material science and engineering. With a total of four patents to his name, Tsai has made impactful advancements in chemical vapor deposition processes that have applications in semiconductor manufacturing.

Latest Patents

One of Tsai’s most notable patents is focused on a Chemical Vapor Deposition of Tungsten (W-CVD) process for growing low-stress, void-free interconnects. This innovative method employs a two-step W-CVD process using two separate chambers. The first chamber completely fills the contact hole with tungsten metal, while the second chamber forms a tungsten layer for interconnects. By allowing independent adjustment of temperature and WF.sub.6 vapor flow for each step, this technique significantly reduces stress and prevents voids during deposition.

Another significant patent relates to a method for stabilizing a silicon structure after ion implantation. This invention outlines a process where the silicon substrate is exposed to temperatures not exceeding 200°C for a minimum of 10 seconds. The method is designed to maintain the crystal structure's integrity, enhancing the reliability of the semiconductor components produced.

Career Highlights

Cheng-Hsun Tsai is currently associated with Mosel Vitelic Corporation, where he continues to drive innovation in semiconductor processing and materials engineering. His work is crucial in advancing technologies that support the production of efficient and reliable electronic devices.

Collaborations

In his endeavors, Tsai has collaborated with notable coworkers such as Yung-Tsun Lo and Wen-Yu Ho. These partnerships have facilitated various research projects and patent developments, contributing further to the field of semiconductor technology.

Conclusion

Cheng-Hsun Tsai’s inventive spirit and technical expertise have made him a significant figure in the realm of innovations in chemical vapor deposition. His breakthroughs not only advance manufacturing processes but also play a vital role in the continued evolution of electronic components. With ongoing contributions and collaborations, Tsai exemplifies the impact that dedicated inventors can have on technology and society.

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