The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 1999

Filed:

Jan. 03, 1997
Applicant:
Inventors:

Yung-Tsun Lo, Yi Lan Hsien, TW;

Chyi-Tsong Ni, Hsinchu, TW;

Cheng-Hsun Tsai, Taichung, TW;

Yui-Ping Huang, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ; C23C / ;
U.S. Cl.
CPC ...
427 96 ; 427 99 ; 427255 ; 4272557 ; 4273766 ; 438592 ;
Abstract

The present invention discloses a method for reducing the reflectivity of a silicide layer. This invention utilizes a rapid thermal oxidation process to treat a tungsten silicide film in order to reduce the reflectivity of the tungsten silicide film. Thus, an anti-reflectivity layer is not required in the present invention. In addition simplify the present invention, a thin oxide layer is growth on the tungsten suicide layer during the rapid thermal oxidation process and the thin oxide layer serves as a hard mask in subsequent steps. In addition, because utilizing the rapid thermal process, the present invention can greatly reduce the resistance of the tungsten silicide in order to increase the speed of the devices.


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