The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
Nov. 07, 1996
Applicant:
Inventors:
Yung-Tsun Lo, Hsinchu, TW;
Cheng-Hsun Tsai, Hsinchu, TW;
Wen-Yu Ho, Hsinchu, TW;
Jung-Chun Hsieh, Hsin-Chu, TW;
Assignee:
Mosel Vitelic, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438530 ; 438 14 ;
Abstract
The present invention provides a method for stabilizing the crystal structure of a silicon substrate after an ion implantation process including the step of exposing the substrate to a temperature not higher than 200.degree. C. for a time period of not less than 10 seconds, and preferably to a temperature between about 100.degree. C. and about 200.degree. C. for a time period of between about 10 seconds and about 10,000 seconds.