Cheng-hsiang Fan

Title: Cheng-hsiang Fan: Semiconductor Memory Structure Inventor

Introduction

Cheng-hsiang Fan is an inventor based in Taoyuan, Taiwan, whose patent work focuses on semiconductor memory structures and manufacturing methods. He is associated with Nan Ya Technology Corporation and is named on 2 patents.

Latest Patents

Fan’s listed patents address techniques for designing and manufacturing semiconductor memory devices.

“Method for Preparing Air Gap Between Bit Line Structure and Capacitor Contact” describes a semiconductor device with an air gap between a bit line structure and a capacitor contact. The method forms spacer structures between these components, with an air gap in the first spacer covered by a second spacer.

“Semiconductor Memory Structure Having Drain Stressor, Source Stressor and Buried Gate and Method of Manufacturing the Same” describes a memory structure with a buried gate positioned between two shallow trench isolation regions in a substrate. The disclosure also identifies drain and source stressors as features of the structure.

Career Highlights

Fan’s patent portfolio reflects work on semiconductor fabrication, including spacer design, air-gap formation, buried gates, and memory-device structures. His association with Nan Ya Technology Corporation connects his listed inventions to the company’s semiconductor technology work.

Collaborations

The available information identifies Nan Ya Technology Corporation as Fan’s company affiliation. It does not specify co-inventors or other collaborators for the listed patents.

Conclusion

Cheng-hsiang Fan’s two listed patents focus on semiconductor memory structures and manufacturing processes, including air-gap spacers and buried-gate designs.