The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Nov. 23, 2023
Applicant:

Nanya Technology Corporation, New Taipei City, TW;

Inventor:

Cheng-Hsiang Fan, Taoyuan City, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10W 20/00 (2026.01); H10W 20/43 (2026.01); H10W 20/46 (2026.01);
U.S. Cl.
CPC ...
H10B 12/0335 (2023.02); H10B 12/482 (2023.02); H10W 20/072 (2026.01); H10W 20/43 (2026.01); H10W 20/46 (2026.01);
Abstract

The present disclosure provides a semiconductor device with an air gap between a bit line structure and capacitor contact and also provides a method for preparing the same. The method includes defining an active region in a substrate, forming a bit line structure and capacitor contact disposed over and electrically connected to the active region, forming a first spacer structure sandwiched between the bit line structure and the capacitor contact, and forming a second spacer structure disposed over the first spacer structure. The first spacer structure includes an air gap structure and the air gap structure is covered by the second spacer structure.


Find Patent Forward Citations

Fan, Cheng-Hsiang. (2026). Method for preparing air gap between bit line stricture and capacitor contact (U.S. Patent No. 12740042). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12740042

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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