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For the Inventor, By the Inventor

Hsinchu, Taiwan

Cheng-Chung Tsao

This inventor holds 6 USPTO granted patents. Top assignee: Integrated Memory Technologies, Inc.. Active years: 2002-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Chung Tsao. Retrieved from https://idiyas.com/inventor/cheng-chung-tsao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6

% Patents Active = 83.3

Average Co-Inventor Count = 1.5

ph-index = 6

Forward Citations = 128(Granted Patents)


Company Filing History:

goldMedal6 out of 20 
 
Integrated Memory Technologies, Inc.
 patents

Years Active: 2002-2003

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6 patents (USPTO):Explore Patents
1. 6614715 - Integrated circuit memory device having interleaved read and program capabilities and methods of operating same (2003-09-02),
2. 6556508 - Integrated circuit memory device having interleaved read and program capabilities and methods of operating same (2003-04-29),
3. 6507514 - Integrated circuit memory chip for use in single or multi-chip packaging (2003-01-14),
4. 6496415 - Non-volatile memory device having high speed page mode operation (2002-12-17),
5. 6469955 - Integrated circuit memory device having interleaved read and program capabilities and methods of operating same (2002-10-22),
6. 6377507 - Non-volatile memory device having high speed page mode operation (2002-04-23),

Title: Cheng-Chung Tsao: Innovator in Integrated Circuit Memory Technology

Introduction

Cheng-Chung Tsao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor memory technology, holding a total of six patents. His work focuses on enhancing the efficiency and capabilities of integrated circuit memory devices.

Latest Patents

One of Cheng-Chung Tsao's latest patents is titled "Integrated circuit memory device having interleaved read and program capabilities and methods of operating same." This innovative nonvolatile semiconductor memory includes a plurality of memory cells arranged in columns and rows, along with multiple word lines, bit lines, output buffers, and page buffers grouped into sub-pages. The architecture allows for simultaneous reading and updating of page buffer data across different sub-pages. By utilizing two sets of address registers to store starting and end addresses for programming, the sub-page programming technique significantly reduces disturbance and programming time.

Career Highlights

Cheng-Chung Tsao has established himself as a key figure in the semiconductor industry through his work at Integrated Memory Technologies, Inc. His expertise in memory device architecture has led to advancements that benefit various applications in technology.

Collaborations

Cheng-Chung Tsao collaborates with Tien-Ler Lin, contributing to the development of innovative memory solutions.

Conclusion

Cheng-Chung Tsao's contributions to integrated circuit memory technology exemplify his commitment to innovation and efficiency in semiconductor design. His patents reflect a deep understanding of memory architecture, paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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