Cheng C Hu

Title: The Innovations of Cheng C Hu

Introduction

Cheng C Hu is a notable inventor based in San Jose, CA, who has made significant contributions to the field of integrated circuits. With a total of 2 patents, his work focuses on advancing the technology behind flash memory and integrated circuit design.

Latest Patents

One of his latest patents is titled "Method of fabrication of a novel flash integrated circuit." This invention describes a method for fabricating a flash memory integrated circuit, which involves creating a dielectric filled trench isolation region in a silicon substrate. This region effectively isolates different portions of the silicon substrate, allowing for the implantation of ions to form source regions and a doped region within the trench.

Another significant patent is the "Dopant-diffusion buffered buried contact module for integrated circuits." This invention introduces a buried contact module that includes a dopant-diffusion buffer layer. The buffer layer, formed with a thin dielectric region, limits phosphorous diffusion into the well region, resulting in a buried contact junction with desirable electrical characteristics.

Career Highlights

Cheng C Hu has worked with prominent companies in the technology sector, including Intel Corporation and Mosel Vitelic Corporation. His experience in these organizations has contributed to his expertise in integrated circuit technology and innovation.

Collaborations

Throughout his career, Cheng has collaborated with talented individuals such as Krishna Kumar Parat and Raghupathy V Giridhar. These collaborations have likely enriched his work and led to further advancements in his field.

Conclusion

Cheng C Hu's contributions to the field of integrated circuits through his innovative patents demonstrate his commitment to advancing technology. His work continues to influence the development of flash memory and integrated circuit design.