The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1995
Filed:
May. 25, 1993
Mong-Song Liang, Cupertino, CA (US);
Cheng C Hu, San Jose, CA (US);
Ting-Wah Wong, Cupertino, CA (US);
Mosel Vitelic Corporation, San Jose, CA (US);
Abstract
A buried contact module is provided that includes a dopant-diffusion buffer layer. The dopant-diffusion buffer layer is formed with a thin dielectric region fabricated between the polysilicon contact region and the well region. The dielectric region formed of, for example, silicon dioxide, limits the amount of phosphorous diffusion into the well region. Thus, a buried contact junction can be formed in an integrated circuit having a high punch-through voltage characteristic, a low junction leakage current characteristic and a low polysilicon resistance. In addition, the buried contact junction maintains a relatively low buried contact resistance.