Chen-Wei Liao

Title: Chen-Wei Liao and Semiconductor Process Innovation.

Introduction

Chen-Wei Liao is an inventor associated with Jhushan, Taiwan, and Macronix International Co., Ltd. His patent work concerns semiconductor-device processing, particularly techniques for preparing oxide layers for planarization.

Latest Patents

Liao is credited with 1 patent, titled “Plasma Assisted Pre-Planarization Process.” The invention describes filling a trench in a semiconductor device with an oxide layer using plasma vapor deposition. Because the deposited oxide can form sharp corners, the process uses pre-planarization sputtering to reduce their sharpness before polishing is performed to planarize the layer.

Career Highlights

The patent reflects Liao’s work on improving the sequence of semiconductor fabrication steps. By addressing oxide-layer corner sharpness before polishing, the disclosed method focuses on preparing the surface for the subsequent planarization process.

Collaborations

Liao’s listed coworkers include Yung-Tai Hung and Chun-Fu Chen. His patent is associated with Macronix International Co., Ltd.

Conclusion

Chen-Wei Liao’s patent documents a semiconductor-processing approach that combines plasma vapor deposition, sputtering, and polishing to prepare and planarize an oxide layer.