The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2007

Filed:

Apr. 30, 2004
Applicants:

Yung-tai Hung, Chiayi, TW;

Chun-fu Chen, Taipei, TW;

Yun-chi Yang, Cyonglin Township, Hsinchu County, TW;

Chin-hsiang Lin, Hsinchu, TW;

Chen-wei Liao, Jhushan Township, Nantou County, TW;

Inventors:

Yung-Tai Hung, Chiayi, TW;

Chun-Fu Chen, Taipei, TW;

Yun-Chi Yang, Cyonglin Township, Hsinchu County, TW;

Chin-Hsiang Lin, Hsinchu, TW;

Chen-Wei Liao, Jhushan Township, Nantou County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H91L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is related to methods of processing a semiconductor device. A plasma vapor deposition process is used to fill a trench with an oxide layer, wherein sharp corners are formed by the oxide layer. A pre-planarization sputtering process is performed to reduce the oxide layer corner sharpness. A planarization process is performed using polishing.


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